SIHP050N60E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 51A TO220AB
$6.14
Available to order
Reference Price (USD)
1+
$10.60000
10+
$9.57900
100+
$7.94220
500+
$6.71460
1,000+
$5.89620
Exquisite packaging
Discount
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Optimize your electronic systems with SIHP050N60E-GE3, a high-quality Transistors - FETs, MOSFETs - Single from Vishay Siliconix. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SIHP050N60E-GE3 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 23A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3459 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 278W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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