SIHP12N60E-BE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 12A TO220AB
$2.82
Available to order
Reference Price (USD)
1+
$2.82000
500+
$2.7918
1000+
$2.7636
1500+
$2.7354
2000+
$2.7072
2500+
$2.679
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with SIHP12N60E-BE3, a reliable Transistors - FETs, MOSFETs - Single by Vishay Siliconix. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SIHP12N60E-BE3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 147W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
STMicroelectronics
SCTW90N65G2V
Vishay Siliconix
SIHB24N65EFT1-GE3
Micro Commercial Co
MCQ05N15-TP
Nexperia USA Inc.
PSMNR60-25YLHX
Fairchild Semiconductor
HUFA75307D3ST
Rohm Semiconductor
RF6C055BCTCR
Sanken
2SK3004
Infineon Technologies
IPB65R095C7ATMA2
onsemi
NTTFS5116PLTWG
STMicroelectronics