SIHP22N65E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 650V 22A TO220AB
$2.74
Available to order
Reference Price (USD)
1+
$5.28000
10+
$4.73100
100+
$3.90930
500+
$3.19716
1,000+
$2.72240
3,000+
$2.59458
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SIHP22N65E-GE3 by Vishay Siliconix. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SIHP22N65E-GE3 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 227W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Vishay Siliconix
SIR120DP-T1-RE3
Infineon Technologies
BSZ0501NSIATMA1
Renesas Electronics America Inc
RJK0348DSP-00#J0
Alpha & Omega Semiconductor Inc.
AON7428
Vishay Siliconix
SIHF35N60E-GE3
onsemi
NTD4863N-1G
Toshiba Semiconductor and Storage
SSM6K407TU,LF
Fairchild Semiconductor
FDS7088SN3
STMicroelectronics
STP200NF03
onsemi