SIHP24N80AE-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 800V 21A TO220AB
$3.50
Available to order
Reference Price (USD)
1+
$3.50000
500+
$3.465
1000+
$3.43
1500+
$3.395
2000+
$3.36
2500+
$3.325
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SIHP24N80AE-GE3 by Vishay Siliconix. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SIHP24N80AE-GE3 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 208W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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