SIHP30N60E-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 29A TO220AB
$6.27
Available to order
Reference Price (USD)
1+
$6.62000
10+
$5.91300
100+
$4.84830
500+
$3.92590
1,000+
$3.31100
3,000+
$3.14545
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance SIHP30N60E-GE3 from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, SIHP30N60E-GE3 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: -
- Package / Case: TO-220-3
Related Products
Texas Instruments
CSD17484F4
Taiwan Semiconductor Corporation
TSM70N750CH C5G
Fairchild Semiconductor
SSI4N60BTU
Nexperia USA Inc.
PSMN3R5-80PS,127
Vishay Siliconix
SIHA22N60E-GE3
onsemi
FDMS7692
Vishay Siliconix
IRFD210PBF
Panjit International Inc.
PJW5N10-AU_R2_000A1
IXYS
IXFN82N60P
Vishay Siliconix