SIR108DP-T1-RE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 100V 12.4A/45A PPAK
$1.79
Available to order
Reference Price (USD)
3,000+
$0.80819
6,000+
$0.77025
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with SIR108DP-T1-RE3 by Vishay Siliconix, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SIR108DP-T1-RE3 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 12.4A (Ta), 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
STMicroelectronics
STD3NK100Z
Infineon Technologies
AUIRFP4568-E
STMicroelectronics
STW48NM60N
Infineon Technologies
IPAN80R280P7XKSA1
onsemi
FDB15N50
Fairchild Semiconductor
FDI047AN08A0
Diodes Incorporated
DMN3042L-13
Diotec Semiconductor
MMFTN6001
Fairchild Semiconductor
HUF76639S3ST-F085
Diodes Incorporated