SIR180DP-T1-RE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 60V 32.4A/60A PPAK
$1.88
Available to order
Reference Price (USD)
3,000+
$0.92009
6,000+
$0.88817
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance SIR180DP-T1-RE3 from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, SIR180DP-T1-RE3 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 32.4A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.05mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4030 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 5.4W (Ta), 83.3W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Nexperia USA Inc.
BUK6Y14-40PX
Vishay Siliconix
SI2307BDS-T1-GE3
Fairchild Semiconductor
IRFS750A
Nexperia USA Inc.
BUK9620-100B,118
Diodes Incorporated
DMN6140L-7
IXYS
IXTA08N100D2HV
IXYS
IXFA130N10T2
Renesas Electronics America Inc
N0413N-ZK-E1-AY
Nexperia USA Inc.
PSMN8R0-80YLX
onsemi