SIR470DP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 40V 60A PPAK SO-8
$2.95
Available to order
Reference Price (USD)
3,000+
$1.35135
6,000+
$1.30130
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Vishay Siliconix presents SIR470DP-T1-GE3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SIR470DP-T1-GE3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5660 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Vishay Siliconix
SIS429DNT-T1-GE3
Vishay Siliconix
SI4431BDY-T1-E3
Texas Instruments
CSD17576Q5B
Fairchild Semiconductor
NDS9430
Texas Instruments
CSD19534Q5A
onsemi
NVMFS6H801NLWFT1G
STMicroelectronics
STB47N50DM6AG
STMicroelectronics
STW48N60M6
IXYS
IXTH6N50D2
Infineon Technologies