SIR624DP-T1-RE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 200V 5.7A/18.6A PPAK
$0.57
Available to order
Reference Price (USD)
1+
$0.57255
500+
$0.5668245
1000+
$0.561099
1500+
$0.5553735
2000+
$0.549648
2500+
$0.5439225
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance SIR624DP-T1-RE3 from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, SIR624DP-T1-RE3 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 18.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 52W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Infineon Technologies
IRFB7534PBF
Renesas Electronics America Inc
NP80N04PDG-E1B-AY
onsemi
FCB20N60FTM
Texas Instruments
CSD16415Q5T
Vishay Siliconix
IRF510SPBF
Infineon Technologies
IPD25DP06LMATMA1
STMicroelectronics
STW52NK25Z
Fairchild Semiconductor
HUF76113T3ST
Vishay Siliconix
SQ2398ES-T1_BE3
Microchip Technology