SISHA12ADN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 30V 22A/25A PPAK
$0.90
Available to order
Reference Price (USD)
1+
$0.90000
500+
$0.891
1000+
$0.882
1500+
$0.873
2000+
$0.864
2500+
$0.855
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance SISHA12ADN-T1-GE3 from Vishay Siliconix, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, SISHA12ADN-T1-GE3 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.3mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8SH
- Package / Case: PowerPAK® 1212-8SH
Related Products
Renesas Electronics America Inc
2SK2372(1)-A
onsemi
FQP50N06
IXYS
IXFH6N120P
onsemi
FDD86102
STMicroelectronics
STFI24NM60N
Diodes Incorporated
DMP2110U-13
Infineon Technologies
IPA80R600P7XKSA1
Alpha & Omega Semiconductor Inc.
AOT095A60L
Renesas Electronics America Inc
2SJ330-AZ
onsemi