SISS63DN-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 35.1/127.5A PPAK
$1.05
Available to order
Reference Price (USD)
1+
$1.05000
500+
$1.0395
1000+
$1.029
1500+
$1.0185
2000+
$1.008
2500+
$0.9975
Exquisite packaging
Discount
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Boost your electronic applications with SISS63DN-T1-GE3, a reliable Transistors - FETs, MOSFETs - Single by Vishay Siliconix. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SISS63DN-T1-GE3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 35.1A (Ta), 127.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 8 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 7080 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 65.8W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 1212-8S
- Package / Case: PowerPAK® 1212-8S
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