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SIUD402ED-T1-GE3

Vishay Siliconix
SIUD402ED-T1-GE3 Preview
Vishay Siliconix
MOSFET N-CH 20V 1A PPAK 0806
$0.08
Available to order
Reference Price (USD)
6,000+
$0.08715
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 730mOhm @ 200mA, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 8 V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 16 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 0806
  • Package / Case: PowerPAK® 0806

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