SIZ710DT-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 20V 16A POWERPAIR
$1.56
Available to order
Reference Price (USD)
3,000+
$0.70520
6,000+
$0.67209
15,000+
$0.64844
Exquisite packaging
Discount
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Optimize your electronic circuits with Vishay Siliconix s SIZ710DT-T1-GE3, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how SIZ710DT-T1-GE3 can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 16A, 35A
- Rds On (Max) @ Id, Vgs: 6.8mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 10V
- Power - Max: 27W, 48W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-PowerPair™
- Supplier Device Package: 6-PowerPair™
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