SIZF906BDT-T1-GE3
Vishay Siliconix
Vishay Siliconix
DUAL N-CHANNEL 30 V (D-S) MOSFET
$1.73
Available to order
Reference Price (USD)
1+
$1.73000
500+
$1.7127
1000+
$1.6954
1500+
$1.6781
2000+
$1.6608
2500+
$1.6435
Exquisite packaging
Discount
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The SIZF906BDT-T1-GE3 from Vishay Siliconix is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, SIZF906BDT-T1-GE3 offers the reliability you need. Contact us now to discuss how we can support your project requirements with Vishay Siliconix s cutting-edge solutions.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual), Schottky
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc)
- Rds On (Max) @ Id, Vgs: 2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V, 165nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1630pF @ 15V, 5550pF @ 15V
- Power - Max: 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: 8-PowerPair® (6x5)
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