SM6S12AHE3_A/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
TVS DIODE 12VWM 19.9VC DO218AB
$2.36
Available to order
Reference Price (USD)
750+
$2.25475
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize your circuit's lifespan with Vishay General Semiconductor - Diodes Division's SM6S12AHE3_A/I TVS Diodes, offering superior protection against electrical surges. Ideal for use in military, automotive, and industrial environments, these diodes provide high power handling and fast reaction times. Their robust design ensures durability even in harsh conditions. Ready to enhance your protection strategy? Inquire now!
Specifications
- Product Status: Active
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 12V
- Voltage - Breakdown (Min): 13.3V
- Voltage - Clamping (Max) @ Ipp: 19.9V
- Current - Peak Pulse (10/1000µs): 231A
- Power - Peak Pulse: 4600W (4.6kW)
- Power Line Protection: No
- Applications: Automotive
- Capacitance @ Frequency: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-218AB
- Supplier Device Package: DO-218AB
Related Products
Vishay General Semiconductor - Diodes Division
SM15T68CAHM3_A/H
Diotec Semiconductor
BZW04-111
STMicroelectronics
SMA6F31AY
Diotec Semiconductor
P6SMBJ28A
Vishay General Semiconductor - Diodes Division
SMF7V0A-HM3-08
Rohm Semiconductor
SMF10VTR
Vishay General Semiconductor - Diodes Division
P4KE8.2A-E3/73
Semtech Corporation
UCLAMP2424PWQ.C
Comchip Technology
TV30C6V0JB-G
Microchip Technology