SM8S40AHE3_A/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
TVS DIODE 40VWM 64.5VC DO218AB
$4.29
Available to order
Reference Price (USD)
750+
$2.56221
1,500+
$2.16090
2,250+
$2.05800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Vishay General Semiconductor - Diodes Division's SM8S40AHE3_A/I TVS Diodes provide unmatched protection against transient voltage events, ensuring your electronics remain safe and operational. Ideal for use in medical devices, aerospace, and IoT applications, these diodes feature low clamping voltage and high energy absorption. Their versatility and reliability make them a must-have for any circuit design. Interested in learning more? Reach out to us today!
Specifications
- Product Status: Active
- Type: Zener
- Unidirectional Channels: 1
- Bidirectional Channels: -
- Voltage - Reverse Standoff (Typ): 40V
- Voltage - Breakdown (Min): 44.4V
- Voltage - Clamping (Max) @ Ipp: 64.5V
- Current - Peak Pulse (10/1000µs): 102A
- Power - Peak Pulse: 6600W (6.6kW)
- Power Line Protection: No
- Applications: Automotive
- Capacitance @ Frequency: -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: DO-218AB
- Supplier Device Package: DO-218AB
Related Products
Microchip Technology
SMDA03-6/TR7
Diotec Semiconductor
5KP54C
Vishay General Semiconductor - Diodes Division
SMF6V0A-HM3-08
Microchip Technology
MASMCJ90CAE3
Microchip Technology
MSMCG43CAE3
Vishay General Semiconductor - Diodes Division
SMA5J36CAHM3_A/H
Vishay General Semiconductor - Diodes Division
1N6296A-E3/51
STMicroelectronics
SMB15F40AY
Microchip Technology
MSMBJ8.5AE3
Littelfuse Inc.