SMBT3904UPNE3627
Infineon Technologies
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
$0.08
Available to order
Reference Price (USD)
1+
$0.08000
500+
$0.0792
1000+
$0.0784
1500+
$0.0776
2000+
$0.0768
2500+
$0.076
Exquisite packaging
Discount
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Optimize your designs with the SMBT3904UPNE3627 Transistor Arrays by Infineon Technologies, providing superior electrical characteristics and reliability. Features include low on-resistance, high current gain, and ESD protection, perfect for sensitive and high-power applications. Ideal for use in medical devices, power converters, and consumer gadgets. Let s collaborate send us your specifications and we ll deliver the perfect solution for your needs!
Specifications
- Product Status: Active
- Transistor Type: NPN, PNP
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 330mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: PG-SC74-6
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