SMMUN2233LT1G
onsemi
onsemi
TRANS PREBIAS NPN 0.246W SOT23
$0.33
Available to order
Reference Price (USD)
3,000+
$0.07227
6,000+
$0.06534
15,000+
$0.05841
30,000+
$0.05495
75,000+
$0.04917
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SMMUN2233LT1G by onsemi is a premier choice in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for precision and efficiency, featuring high gain bandwidth, low distortion, and excellent thermal management. Perfect for RF applications, sensor interfaces, and control systems. onsemi stands for quality and innovation. Reach out to us for expert advice and competitive pricing!
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 246 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
Related Products
onsemi
NSBA123EF3T5G
Rohm Semiconductor
DTC123EKAT146
Toshiba Semiconductor and Storage
RN2318(TE85L,F)
Rohm Semiconductor
DTC143TU3T106
onsemi
DTC144TM3T5G
Diodes Incorporated
DDTD142JC-7-F
NXP USA Inc.
PDTC144EE,135
onsemi
SMMUN2113LT1G
Rohm Semiconductor
DTC113ZU3T106
Diodes Incorporated