SMSD1819A-RT1G
onsemi
onsemi
SMSD1819 - GP XSTR NPN 50V AUTO
$0.03
Available to order
Reference Price (USD)
9,000+
$0.04284
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose SMSD1819A-RT1G by onsemi for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, SMSD1819A-RT1G is a versatile solution. Ready to order? Submit your inquiry today and let onsemi provide the components you need.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 210 @ 2mA, 10V
- Power - Max: 150 mW
- Frequency - Transition: -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70-3 (SOT323)
Related Products
onsemi
KSC1815YTA
Microchip Technology
JANTXV2N6650
Diodes Incorporated
MMBTA42Q-7-F
Microchip Technology
JAN2N1480
onsemi
2SC5888
Diodes Incorporated
FZT653TA
NXP USA Inc.
BC846BW/DG/B3115
Diodes Incorporated
ZXTN2007ZTA
Micro Commercial Co
MMBTA06-TP
Solid State Inc.