SMUN5230DW1T1G
onsemi
onsemi
TRANS 2NPN PREBIAS 0.187W SOT363
$0.41
Available to order
Reference Price (USD)
3,000+
$0.10593
6,000+
$0.10031
15,000+
$0.09189
30,000+
$0.08627
75,000+
$0.07972
Exquisite packaging
Discount
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Experience precision engineering with onsemi's SMUN5230DW1T1G Bipolar Junction Transistor Arrays, the optimal solution for space-efficient designs. These pre-biased components eliminate external resistor needs while providing predictable performance in amplification and switching roles. Application sectors include automotive electronics, power tools, and renewable energy systems where reliability is paramount. The product family offers multiple configuration options, all featuring low quiescent current, high gain bandwidth product, and robust EMC performance. onsemi provides comprehensive technical resources for SMUN5230DW1T1G integration. Take the next step request a quote or design consultation through our convenient inquiry portal!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 1kOhms
- Resistor - Emitter Base (R2): 1kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 187mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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