SPB80N06S08ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 55V 80A TO263-3
$1.87
Available to order
Reference Price (USD)
1+
$1.86827
500+
$1.8495873
1000+
$1.8309046
1500+
$1.8122219
2000+
$1.7935392
2500+
$1.7748565
Exquisite packaging
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Enhance your circuit performance with SPB80N06S08ATMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust SPB80N06S08ATMA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7.7mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 240µA
- Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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