SQ2301ES-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 20V 3.9A TO236
$0.56
Available to order
Reference Price (USD)
3,000+
$0.17328
6,000+
$0.16272
15,000+
$0.15216
30,000+
$0.14477
Exquisite packaging
Discount
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Enhance your circuit performance with SQ2301ES-T1_GE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust SQ2301ES-T1_GE3 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 3W (Tc)
- Operating Temperature: -55°C ~ 175°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236 (SOT-23)
- Package / Case: TO-236-3, SC-59, SOT-23-3
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