SQ3427EV-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 60V 5.3A 6TSOP
$0.72
Available to order
Reference Price (USD)
3,000+
$0.25992
6,000+
$0.24408
15,000+
$0.22824
30,000+
$0.21715
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SQ3427EV-T1_GE3 by Vishay Siliconix. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SQ3427EV-T1_GE3 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 5W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSOP
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Fairchild Semiconductor
FDMS8570SDC
Infineon Technologies
SPW47N65C3FKSA1
Nexperia USA Inc.
BUK7M12-60EX
Panjit International Inc.
PJD16N06A-AU_L2_000A1
Renesas Electronics America Inc
UPA2713GR-E1-A
onsemi
NTD360N65S3H
Nexperia USA Inc.
PMV50XPR
Nexperia USA Inc.
BUK751R8-40E,127
Taiwan Semiconductor Corporation
TSM70N380CI C0G
Nexperia USA Inc.