SQJ200EP-T1_GE3
Vishay Siliconix

Vishay Siliconix
MOSFET 2N-CH 20V 20A/60A PPAK SO
$1.27
Available to order
Reference Price (USD)
3,000+
$0.47232
6,000+
$0.45014
15,000+
$0.43430
Exquisite packaging
Discount
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Enhance your electronic applications with Vishay Siliconix s SQJ200EP-T1_GE3, a leading product in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are known for their high-speed performance, low energy consumption, and robust design. Perfect for use in switching regulators, audio systems, and communication devices. Discover the benefits of SQJ200EP-T1_GE3 today get in touch with us for a detailed quote and technical support.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 20A, 60A
- Rds On (Max) @ Id, Vgs: 8.8mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 975pF @ 10V
- Power - Max: 27W, 48W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SO-8 Dual
- Supplier Device Package: PowerPAK® SO-8 Dual Asymmetric