SQJ956EP-T1_GE3
Vishay Siliconix

Vishay Siliconix
MOSFET 2 N-CH 60V POWERPAK SO8
$1.16
Available to order
Reference Price (USD)
3,000+
$0.43296
6,000+
$0.41263
15,000+
$0.39811
Exquisite packaging
Discount
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The SQJ956EP-T1_GE3 by Vishay Siliconix is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Vishay Siliconix s SQJ956EP-T1_GE3 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Rds On (Max) @ Id, Vgs: 26.7mOhm @ 5.2A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1395pF @ 30V
- Power - Max: 34W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SO-8 Dual
- Supplier Device Package: PowerPAK® SO-8 Dual