SQJA72EP-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 100V 37A PPAK SO-8
$1.63
Available to order
Reference Price (USD)
3,000+
$0.60680
6,000+
$0.57831
15,000+
$0.55796
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with SQJA72EP-T1_GE3, a reliable Transistors - FETs, MOSFETs - Single by Vishay Siliconix. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SQJA72EP-T1_GE3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1390 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 55W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® SO-8
- Package / Case: PowerPAK® SO-8
Related Products
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJG15N15B-F1-0100HF
Nexperia USA Inc.
BUK764R4-60E,118
Sanyo
MCH6424-TL-E
Toshiba Semiconductor and Storage
TK10A55D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK14G65W5,RQ
Infineon Technologies
SN7002WH6327XTSA1
STMicroelectronics
STU13N60M2
Toshiba Semiconductor and Storage
TK11P65W,RQ
Toshiba Semiconductor and Storage
TK20A60W5,S5VX
Nexperia USA Inc.