SQP100P06-9M3L_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 60V 100A TO220AB
$2.12
Available to order
Reference Price (USD)
1+
$2.12108
500+
$2.0998692
1000+
$2.0786584
1500+
$2.0574476
2000+
$2.0362368
2500+
$2.015026
Exquisite packaging
Discount
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Vishay Siliconix presents SQP100P06-9M3L_GE3, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, SQP100P06-9M3L_GE3 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Last Time Buy
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 12010 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 187W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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