SQS966ENW-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CHAN 60V
$1.03
Available to order
Reference Price (USD)
3,000+
$0.39816
6,000+
$0.37232
15,000+
$0.35940
30,000+
$0.35235
Exquisite packaging
Discount
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Experience the next level of semiconductor technology with Vishay Siliconix s SQS966ENW-T1_GE3, part of the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are built to deliver exceptional performance with features like high current capacity, minimal power loss, and enhanced durability. Suitable for a wide array of applications including LED lighting, automotive systems, and renewable energy solutions. Get in touch with us today to request a sample or inquire about bulk pricing for SQS966ENW-T1_GE3.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Rds On (Max) @ Id, Vgs: 36mOhm @ 1.25A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 572pF @ 25V
- Power - Max: 27.8W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: PowerPAK® 1212-8W Dual
- Supplier Device Package: PowerPAK® 1212-8W Dual
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