SQUN702E-T1_GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N&P-CH COMMON DRAIN
$3.81
Available to order
Reference Price (USD)
1+
$3.81000
500+
$3.7719
1000+
$3.7338
1500+
$3.6957
2000+
$3.6576
2500+
$3.6195
Exquisite packaging
Discount
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Optimize your electronic circuits with Vishay Siliconix s SQUN702E-T1_GE3, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how SQUN702E-T1_GE3 can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: N and P-Channel, Common Drain
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V, 200V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc), 20A (Tc)
- Rds On (Max) @ Id, Vgs: 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA, 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 23nC @ 20V, 14nC @ 20V, 30.2nC @ 100V
- Input Capacitance (Ciss) (Max) @ Vds: 1474pF @ 20V, 1450pF @ 20V, 1302pF @ 100V
- Power - Max: 48W (Tc), 60W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: Die
- Supplier Device Package: Die
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