SS1FN6-M3/H
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 1A DO219AB
$0.45
Available to order
Reference Price (USD)
15,000+
$0.06954
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic designs with SS1FN6-M3/H Single Rectifier Diodes by Vishay General Semiconductor - Diodes Division, offering unparalleled efficiency and durability. Ideal for power supplies, inverters, and DC-DC converters, these diodes feature ultra-low leakage and high junction temperature tolerance. Their robust design ensures stable performance in extreme conditions. Whether for prototyping or mass production, Vishay General Semiconductor - Diodes Division has you covered. Request a quote or technical support today!
Specifications
- Product Status: Active
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 800 µA @ 60 V
- Capacitance @ Vr, F: 90pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
Vishay General Semiconductor - Diodes Division
SD101AWS-HE3-18
Vishay General Semiconductor - Diodes Division
VS-85HFR20
Diotec Semiconductor
BA157
Vishay General Semiconductor - Diodes Division
V8P15HM3/I
KYOCERA AVX
SD1206T040S2R0
Infineon Technologies
SDT05S60XK
WeEn Semiconductors
NXPSC106506Q
Panjit International Inc.
BR38_R1_00001
Vishay General Semiconductor - Diodes Division
SE50PAJ-M3/I
Vishay General Semiconductor - Diodes Division