SS1FN6-M3/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 1A DO219AB
$0.06
Available to order
Reference Price (USD)
30,000+
$0.05700
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-quality SS1FN6-M3/I Single Rectifier Diodes from Vishay General Semiconductor - Diodes Division, designed for efficient power conversion and reliable performance. These diodes are ideal for a wide range of applications, including power supplies, converters, and inverters. With robust construction and superior thermal management, they ensure long-lasting operation under demanding conditions. Features include low forward voltage drop, high surge current capability, and excellent reverse leakage characteristics. Whether for industrial or consumer electronics, Vishay General Semiconductor - Diodes Division's SS1FN6-M3/I delivers unmatched reliability. Contact us today for more details and to request a quote!
Specifications
- Product Status: Active
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 800 µA @ 60 V
- Capacitance @ Vr, F: 90pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
Panjit International Inc.
PG5399_R2_00001
onsemi
MURS260T3G
Panjit International Inc.
PG5392_R2_00001
Vishay General Semiconductor - Diodes Division
AU1PJHM3/85A
SMC Diode Solutions
SB5100
Vishay General Semiconductor - Diodes Division
BYS10-35-M3/TR
NTE Electronics, Inc
NTE5815HC
Diodes Incorporated
BAV16S92-7
onsemi
SB10-05A3-BT
Central Semiconductor Corp