SSM3J36FS,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 20V 330MA SSM
$0.30
Available to order
Reference Price (USD)
3,000+
$0.04830
6,000+
$0.04200
15,000+
$0.03570
30,000+
$0.03360
75,000+
$0.03150
150,000+
$0.02940
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover SSM3J36FS,LF, a versatile Transistors - FETs, MOSFETs - Single solution from Toshiba Semiconductor and Storage, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 1.31Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SSM
- Package / Case: SC-75, SOT-416
Related Products
Alpha & Omega Semiconductor Inc.
AOSX21319C
STMicroelectronics
STP78N75F4
Diodes Incorporated
DMP3165LQ-7
Vishay Siliconix
SIHG22N50D-GE3
NXP USA Inc.
PSMN4R6-100XS,127
Infineon Technologies
BSB044N08NN3GXUMA1
Vishay Siliconix
SI1480DH-T1-BE3
IXYS
IXTH76P10T
IXYS
IXTP26P20P
Fairchild Semiconductor