SSM6K781G,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET N-CH 12V 7A 6WCSP6C
$0.19
Available to order
Reference Price (USD)
3,000+
$0.17050
6,000+
$0.15950
15,000+
$0.15400
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SSM6K781G,LF by Toshiba Semiconductor and Storage. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SSM6K781G,LF inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 18mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WCSPC (1.5x1.0)
- Package / Case: 6-UFBGA, WLCSP
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