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SSM6L11TU(TE85L,F)

Toshiba Semiconductor and Storage
SSM6L11TU(TE85L,F) Preview
Toshiba Semiconductor and Storage
MOSFET N/P-CH 20V 0.5A UF6 S
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Specifications

  • Product Status: Obsolete
  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA
  • Rds On (Max) @ Id, Vgs: 145mOhm @ 250MA, 4V
  • Vgs(th) (Max) @ Id: 1.1V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 268pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: UF6

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