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SSM6N357R,LF

Toshiba Semiconductor and Storage
SSM6N357R,LF Preview
Toshiba Semiconductor and Storage
SMALL LOW R-ON MOSFETS DUAL NCH
$0.43
Available to order
Reference Price (USD)
3,000+
$0.13950
6,000+
$0.13050
15,000+
$0.12600
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.8Ohm @ 150mA, 5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 12V
  • Power - Max: 1.5W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 6-SMD, Flat Leads
  • Supplier Device Package: 6-TSOP-F

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