SSM6N35AFE,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET 2 N-CHANNEL 20V 250MA ES6
$0.41
Available to order
Reference Price (USD)
4,000+
$0.07000
8,000+
$0.06300
12,000+
$0.05600
28,000+
$0.05250
100,000+
$0.04900
Exquisite packaging
Discount
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The SSM6N35AFE,LF by Toshiba Semiconductor and Storage is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Toshiba Semiconductor and Storage s SSM6N35AFE,LF be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate, 1.2V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
- Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V
- Power - Max: 250mW
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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