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SSM6N36FE,LM

Toshiba Semiconductor and Storage
SSM6N36FE,LM Preview
Toshiba Semiconductor and Storage
MOSFET 2N-CH 20V 0.5A ES6
$0.09
Available to order
Reference Price (USD)
4,000+
$0.08000
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 500mA
  • Rds On (Max) @ Id, Vgs: 630mOhm @ 200mA, 5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 1.23nC @ 4V
  • Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
  • Power - Max: 150mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: ES6 (1.6x1.6)

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