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SSM6N57NU,LF

Toshiba Semiconductor and Storage
SSM6N57NU,LF Preview
Toshiba Semiconductor and Storage
MOSFET 2N-CH 30V 4A UDFN6
$0.52
Available to order
Reference Price (USD)
3,000+
$0.13365
6,000+
$0.12555
15,000+
$0.11745
30,000+
$0.11340
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-µDFN (2x2)

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