STB13NK60ZT4
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 13A D2PAK
$4.48
Available to order
Reference Price (USD)
1,000+
$1.86340
2,000+
$1.77023
5,000+
$1.70368
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
STB13NK60ZT4 by STMicroelectronics is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, STB13NK60ZT4 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 550mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
onsemi
NTMFS4835NT1G
Goford Semiconductor
GT100N12M
Vishay Siliconix
SIHH11N60E-T1-GE3
onsemi
FDPF20N50FT
NXP USA Inc.
BUK764R3-40B,118
IXYS
IXFN44N100P
STMicroelectronics
STP60NF10
Vishay Siliconix
SIR474DP-T1-GE3
Diodes Incorporated
DMN3009LFVW-13
Infineon Technologies