STB20N90K5
STMicroelectronics
STMicroelectronics
MOSFET N-CH 900V 20A D2PAK
$6.98
Available to order
Reference Price (USD)
1,000+
$4.28465
2,000+
$4.14396
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of STB20N90K5, a premium Transistors - FETs, MOSFETs - Single from STMicroelectronics. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, STB20N90K5 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Microchip Technology
TN5335N8-G
NXP USA Inc.
BUK761R6-40E,118
Diodes Incorporated
DMP2120U-7
onsemi
NTD4302-1G
Infineon Technologies
IPD50P03P4L11ATMA1
STMicroelectronics
STP40N60M2
Vishay Siliconix
SQJ474EP-T2_GE3
Toshiba Semiconductor and Storage
TPN11006NL,LQ
Alpha & Omega Semiconductor Inc.
AOT270AL
NXP USA Inc.