STB34NM60N
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
$11.03
Available to order
Reference Price (USD)
1,000+
$4.60350
2,000+
$4.43300
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
STB34NM60N by STMicroelectronics is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, STB34NM60N ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 105mOhm @ 14.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 2722 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Infineon Technologies
BUZ111S
Renesas Electronics America Inc
UPA620TT-E1-A
Rectron USA
RM80N60DF
Alpha & Omega Semiconductor Inc.
AOI442
STMicroelectronics
STP6N62K3
onsemi
FDMS8680
Renesas Electronics America Inc
H5N5011PL-E
STMicroelectronics
STW18NM60N
NXP USA Inc.
BUK7575-100A,127
Wolfspeed, Inc.