STB35N60DM2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 28A D2PAK
$6.47
Available to order
Reference Price (USD)
1,000+
$3.00847
2,000+
$2.87457
Exquisite packaging
Discount
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Optimize your electronic systems with STB35N60DM2, a high-quality Transistors - FETs, MOSFETs - Single from STMicroelectronics. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, STB35N60DM2 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 210W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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