STD10LN80K5
STMicroelectronics
STMicroelectronics
MOSFET N-CHANNEL 800V 8A DPAK
$3.07
Available to order
Reference Price (USD)
2,500+
$1.30650
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance STD10LN80K5 from STMicroelectronics, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, STD10LN80K5 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-PAK (TO-252)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Diodes Incorporated
DMN3112SQ-7
Vishay Siliconix
IRLIZ44GPBF
Infineon Technologies
IPP60R180C7XKSA1
Vishay Siliconix
SIHF18N50D-E3
Vishay Siliconix
IRF510STRRPBF
Rohm Semiconductor
RD3P130SPTL1
Infineon Technologies
IPB037N06N3GATMA1
Rohm Semiconductor
RD3T050CNTL1
Taiwan Semiconductor Corporation
TSM2328CX RFG
Infineon Technologies