STD140N6F7
STMicroelectronics
STMicroelectronics
MOSFET N-CH 60V 80A DPAK
$1.87
Available to order
Reference Price (USD)
2,500+
$0.74044
5,000+
$0.70748
12,500+
$0.68394
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with STD140N6F7, a premium Transistors - FETs, MOSFETs - Single from STMicroelectronics. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust STD140N6F7 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.8mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 134W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
BSZ067N06LS3GATMA1
STMicroelectronics
STD5N80K5
onsemi
NVMFS5C468NWFT1G
Toshiba Semiconductor and Storage
TPH1R306P1,L1Q
Vishay Siliconix
IRF820STRLPBF
Infineon Technologies
IPD50R500CE
onsemi
NTMTS0D6N04CTXG
Renesas Electronics America Inc
RJK5014DPP-00#T2
Nexperia USA Inc.
BUK963R3-60E,118
Nexperia USA Inc.