STD5N60DM2
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 3.5A DPAK
$1.02
Available to order
Reference Price (USD)
2,500+
$0.40698
5,000+
$0.38190
12,500+
$0.36936
25,000+
$0.36252
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose STD5N60DM2 by STMicroelectronics. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with STD5N60DM2 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.55Ohm @ 1.75A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 45W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
STMicroelectronics
STD45NF75T4
Infineon Technologies
AUIRF2805
Vishay Siliconix
IRFIBE30GPBF
Alpha & Omega Semiconductor Inc.
AOB15S60L
onsemi
FQA36P15
IXYS
IXTA06N120P-TRL
Vishay Siliconix
IRFBC40LPBF
Infineon Technologies
IPW60R041C6FKSA1
Vishay Siliconix
SQM120P10_10M1LGE3
Infineon Technologies