STD80N6F7
STMicroelectronics
STMicroelectronics
MOSFET N-CH 60V 40A DPAK
$0.61
Available to order
Reference Price (USD)
1+
$0.60882
500+
$0.6027318
1000+
$0.5966436
1500+
$0.5905554
2000+
$0.5844672
2500+
$0.578379
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of STD80N6F7, a premium Transistors - FETs, MOSFETs - Single from STMicroelectronics. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, STD80N6F7 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-PAK (TO-252)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
onsemi
NVMFS5C456NT1G
Vishay Siliconix
IRFR9014TRLPBF
Rohm Semiconductor
RCJ451N20TL
Infineon Technologies
IPD038N06N3GATMA1
Vishay Siliconix
SI2306BDS-T1-BE3
onsemi
NTMFS4833NT3G
STMicroelectronics
STL19N65M5
onsemi
FCMT250N65S3
onsemi
NTP2955G
onsemi