STFW3N170
STMicroelectronics
STMicroelectronics
MOSFET N-CH 1700V 2.6A ISOWATT
$6.61
Available to order
Reference Price (USD)
1+
$5.01000
30+
$4.02200
120+
$3.66442
510+
$2.96725
1,020+
$2.50250
2,520+
$2.37738
Exquisite packaging
Discount
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STMicroelectronics presents STFW3N170, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, STFW3N170 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 13Ohm @ 1.3A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 63W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PF
- Package / Case: TO-3P-3 Full Pack
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