STGB15M65DF2
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT M SE
$2.36
Available to order
Reference Price (USD)
1,000+
$1.30662
2,000+
$1.22610
5,000+
$1.18584
Exquisite packaging
Discount
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Enhance your electronic designs with STGB15M65DF2 Single IGBTs from STMicroelectronics, built for high-power applications. Perfect for wind turbines, traction systems, and power tools, these transistors provide reliable performance under extreme conditions. Features like overcurrent protection and high-temperature operation ensure safety and efficiency. STMicroelectronics's expertise guarantees top-tier components for your critical projects. Reach out today for competitive pricing and technical details!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
- Power - Max: 136 W
- Switching Energy: 90µJ (on), 450µJ (off)
- Input Type: Standard
- Gate Charge: 45 nC
- Td (on/off) @ 25°C: 24ns/93ns
- Test Condition: 400V, 15A, 12Ohm, 15V
- Reverse Recovery Time (trr): 142 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D²PAK (TO-263)
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