STGW75H65DFB2-4
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP, 650 V, 7
$6.72
Available to order
Reference Price (USD)
1+
$6.72000
500+
$6.6528
1000+
$6.5856
1500+
$6.5184
2000+
$6.4512
2500+
$6.384
Exquisite packaging
Discount
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Upgrade your power electronics with STGW75H65DFB2-4 Single IGBTs by STMicroelectronics, engineered for precision and durability. Perfect for inverters, welding equipment, and automotive applications, these transistors provide fast switching speeds and excellent thermal stability. Key features include high voltage tolerance, low power loss, and compact design. Trust STMicroelectronics for top-quality components that meet global standards. Request a quote now to learn more about how STGW75H65DFB2-4 can enhance your projects.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 115 A
- Current - Collector Pulsed (Icm): 225 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
- Power - Max: 357 W
- Switching Energy: 992µJ (on), 766µJ (off)
- Input Type: Standard
- Gate Charge: 207 nC
- Td (on/off) @ 25°C: 22ns/121ns
- Test Condition: 400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr): 88 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: TO-247-4
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