STGW8M120DF3
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT M SE
$4.70
Available to order
Reference Price (USD)
1+
$4.09000
30+
$3.33133
120+
$3.05625
510+
$2.52002
1,020+
$2.16250
2,520+
$2.06625
5,010+
$1.99750
Exquisite packaging
Discount
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The STGW8M120DF3 Single IGBT from STMicroelectronics redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. STMicroelectronics stands behind every STGW8M120DF3 with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 16 A
- Current - Collector Pulsed (Icm): 32 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 8A
- Power - Max: 167 W
- Switching Energy: 390µJ (on), 370µJ (Off)
- Input Type: Standard
- Gate Charge: 32 nC
- Td (on/off) @ 25°C: 20ns/126ns
- Test Condition: 600V, 8A, 33Ohm, 15V
- Reverse Recovery Time (trr): 103 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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